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dc.contributor.authorZaretskaya, E.P.-
dc.contributor.authorGremenok, B.F.-
dc.contributor.authorSemchenko, A.V.-
dc.contributor.authorSidsky, V.V.-
dc.contributor.authorJuskenas, R.L.-
dc.contributor.authorСемченко, А.В.-
dc.contributor.authorСидский, В.В.-
dc.date.accessioned2022-02-21T05:57:46Z-
dc.date.available2022-02-21T05:57:46Z-
dc.date.issued2015-
dc.identifier.citationStructural Properties of ZnO:Al Films Produced by the Sol–Gel Technique / E.P. Zaretskaya [et al.] // Semiconductors. - 2015. - Vol. 49, No.10. - P. 1253-1258.ru
dc.identifier.urihttp://elib.gsu.by/jspui/handle/123456789/33721-
dc.description.abstractZnO:Al films are produced by sol–gel deposition at temperatures of 350–550°C, using different types of reagents. Atomic-force microscopy, X-ray diffraction analysis, Raman spectroscopy, and optical transmittance measurements are used to study the dependence of the structural, morphological, and optical properties of the ZnO:Al coatings on the conditions of deposition. The optical conditions for the production of ZnO:Al layers with preferred orientation in the [002] direction and distinguished by small surface rough- ness are established. The layers produced in the study possess optical transmittance at a level of up to 95% in a wide spectral range and can be used in optoelectronic devices.ru
dc.language.isoАнглийскийru
dc.titleStructural Properties of ZnO:Al Films Produced by the Sol–Gel Techniqueru
dc.typeArticleru
dc.rootSemiconductorsru
dc.number№ 10ru
dc.volume49ru
dc.identifier.DOI10.1134/S1063782615100280ru
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