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dc.contributor.authorRogachev, A.V.-
dc.contributor.authorSemchenko, A.V.-
dc.contributor.authorSidsky, V.V.-
dc.contributor.authorGaishun, V.E.-
dc.contributor.authorKovalenko, D.L.-
dc.contributor.authorGremenok, V.-
dc.contributor.authorZaretskaya, H.-
dc.contributor.authorSudnik, L.-
dc.contributor.authorРогачёв, А.В.-
dc.contributor.authorСемченко, А.В.-
dc.contributor.authorСидский, В.В.-
dc.contributor.authorГайшун, В.Е.-
dc.contributor.authorКоваленко, Д.Л.-
dc.date.accessioned2024-10-23T07:18:23Z-
dc.date.available2024-10-23T07:18:23Z-
dc.date.issued2016-
dc.identifier.citationStructural, Optical and Electrical Properties of ZnO: Al Thin Films Synthesized by Sol-gel Method / A.V. Rogachev, A.V. Semchenko, V.V. Sidsky [et al.] // 3rd International Conference on Nanotechnologies and Biomedical Engineering : IFMBE Proceedings. - 2016. - Vol. 55. - P. 111-114.ru
dc.identifier.urihttps://elib.gsu.by/handle123456789/69621-
dc.description.abstractThe possibility of synthesis of active layers for solar cells by sol-gel method has been shown. The structural features of the surface (AFM), crystallization behavior (XRD) during the heating and properties of synthesized films are discussed. Achieved parameters suggest the possibility of using synthesized ZnO layers in solar cells. The perturbation imposed by Al atom incorporation leads to the atomic relaxation, which is computed and discussed in detail.ru
dc.language.isoenru
dc.publisherKrasiko-Printru
dc.subjectsol-gel methodru
dc.subjectsemiconductorsru
dc.subjectsurface structureru
dc.subjectcrystallizationru
dc.subjectsolar cellsru
dc.titleStructural, Optical and Electrical Properties of ZnO: Al Thin Films Synthesized by Sol-gel Methodru
dc.typeArticleru
dc.root3rd International Conference on Nanotechnologies and Biomedical Engineering : IFMBE Proceedingsru
dc.placeOfPublicationMinskru
dc.volume55ru
dc.identifier.DOI10.1007/978-981-287-736-9_26ru
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