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dc.contributor.authorSemchenko, A.V.-
dc.contributor.authorGaishun, V.E.-
dc.contributor.authorSidsky, V.V.-
dc.contributor.authorDemidenko, O.M.-
dc.contributor.authorSoroka, S.A.-
dc.contributor.authorСемченко, А.В.-
dc.contributor.authorГайшун, В.Е.-
dc.contributor.authorСидский, В.В.-
dc.contributor.authorДемиденко, О.М.-
dc.contributor.authorСорока, С.А.-
dc.date.accessioned2021-02-12T12:28:02Z-
dc.date.available2021-02-12T12:28:02Z-
dc.date.issued2010-
dc.identifier.citationThe non-volatile ferroelectric memory (FRAM) on the base of SrBi₂Ta₂O₉ sol-gel films / A.V. Semchenko [et al.] // The 9th International Conference on Global Research and Education, august 9-12, Riga, Latvia. - Riga : RTU Publishing House, 2010. - P. [1].ru
dc.identifier.urihttp://elib.gsu.by/jspui/handle/123456789/16441-
dc.description.abstractThe possibility of the development of the non-volatile ferroelectric memory (FRAM) on the base of SrBi₂Ta₂O₉ (SBT) films synthesized by sol-gel method is discussed. The technology of samples preparation by sol-gel method is described. The AFM images, X-ray and IR spectra of SrBi₂Ta₂O₉ (SBT) films synthesized by sol-gel method are investigated.ru
dc.language.isoАнглийскийru
dc.publisherRTU Publishing Houseru
dc.titleThe non-volatile ferroelectric memory (FRAM) on the base of SrBi₂Ta₂O₉ sol-gel filmsru
dc.typeArticleru
dc.rootThe 9th International Conference on Global Research and Education, august 9-12, Riga, Latviaru
dc.placeOfPublicationRigaru
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