1. Репозиторий УО "Гомельский государственный университет имени Франциска Скорины"
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dc.contributor.authorMorozovsky, N.V.-
dc.contributor.authorSemchenko, A.V.-
dc.contributor.authorSidsky, V.V.-
dc.contributor.authorKolos, V.V.-
dc.contributor.authorTurtsevich, A.S.-
dc.contributor.authorEliseev, E.A.-
dc.contributor.authorMorozovska, A.N.-
dc.contributor.authorСемченко, А.В.-
dc.contributor.authorСидский, В.В.-
dc.date.accessioned2024-12-05T07:22:34Z-
dc.date.available2024-12-05T07:22:34Z-
dc.date.issued2015-
dc.identifier.citationEffect of annealing on the charge-voltage characteristics of SrBi2(TaxNb1-x)2O9 films / N.V. Morozovsky, A.V. Semchenko, V.V. Sidsky [et al.] // Physica B: Condensed Matter. – 2015. – Vol. 464. – P. 1-8.ru
dc.identifier.urihttps://elib.gsu.by/handle123456789/71578-
dc.description.abstractThe effect of changes of the Nb content and annealing on charge-voltage and current-voltage characteristics of film structures Pt/SrBi2(Ta1−xNbx)2O9/Pt/TiO2/SiO2/Si-substrate structures with х = 0, 0.1, 0.2 was studied theoretically and experimentally. Theoretical modeling, which takes into account the mobile charged donors impact on the features of charge-voltage and current-voltage characteristics of ferroelectric-semiconductor films, revealed the changes of conductivity value and ferroelectric parameters. The results of theoretical analysis and experimental results are in qualitative agreement.ru
dc.language.isoenru
dc.titleEffect of annealing on the charge-voltage characteristics of the SrBi2(TaxNb1−x)2O9 filmsru
dc.typeArticleru
dc.rootPhysica B: Condensed Matterru
dc.volume464ru
dc.identifier.DOI10.1016/j.physb.2015.01.013ru
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