| Title: | Effect of annealing on the charge-voltage characteristics of the SrBi2(TaxNb1−x)2O9 films |
| Authors: | Morozovsky, N.V. Semchenko, A.V. Sidsky, V.V. Kolos, V.V. Turtsevich, A.S. Eliseev, E.A. Morozovska, A.N. Семченко, А.В. Сидский, В.В. |
| Issue Date: | 2015 |
| Citation: | Effect of annealing on the charge-voltage characteristics of SrBi2(TaxNb1-x)2O9 films / N.V. Morozovsky, A.V. Semchenko, V.V. Sidsky [et al.] // Physica B: Condensed Matter. – 2015. – Vol. 464. – P. 1-8. |
| Abstract: | The effect of changes of the Nb content and annealing on charge-voltage and current-voltage characteristics of film structures Pt/SrBi2(Ta1−xNbx)2O9/Pt/TiO2/SiO2/Si-substrate structures with х = 0, 0.1, 0.2 was studied theoretically and experimentally. Theoretical modeling, which takes into account the mobile charged donors impact on the features of charge-voltage and current-voltage characteristics of ferroelectric-semiconductor films, revealed the changes of conductivity value and ferroelectric parameters. The results of theoretical analysis and experimental results are in qualitative agreement. |
| URI: | https://elib.gsu.by/handle123456789/71578 |
| Appears in Collections: | Статьи |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Morozovsky_Effect.pdf | 2.12 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.