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dc.contributor.authorVaskevich, V.V.-
dc.contributor.authorKovalenko, D.L.-
dc.contributor.authorNikityuk, Y.V.-
dc.contributor.authorGaishun, V.E.-
dc.contributor.authorAushev, I.Y.-
dc.contributor.authorВаськевич, В.В.-
dc.contributor.authorКоваленко, Д.Л.-
dc.contributor.authorНикитюк, Ю.В.-
dc.contributor.authorГайшун, В.Е.-
dc.contributor.authorАушев, И.Ю.-
dc.date.accessioned2026-03-18T14:11:39Z-
dc.date.available2026-03-18T14:11:39Z-
dc.date.issued2025-
dc.identifier.citationOptimization of Dielectric Sol-Gel Coating Synthesis Parameters via Genetic Algorithm / V.V. Vaskevich, D.L. Kovalenko, Y.V. Nikityuk [et al.] // 9th International Conference on Information, Control, and Communication Technologies (ICCT). - Gomel, 2025. - Р. [1-4].ru
dc.identifier.urihttps://elib.gsu.by/handle123456789/84692-
dc.description.abstractThis study optimized the parameters of silicon dioxide coating formation using a genetic algorithm. The coatings were prepared via the sol-gel method. Experiments were conducted using a face-centered central composite design, with the following input parameters: the ratio of silicon organic compounds in the initial sol, spin-coating rotation speed, and annealing temperature. The output characteristics included coating thickness, refractive index, and leakage currents of the sol-gel coatings. The influence of coating formation parameters on these characteristics was evaluated. The coating process optimization was performed using a genetic algorithm with the objective of minimizing leakage currents for sol-gel coatings of specified thickness.ru
dc.language.isoenru
dc.subjectgenetic algorithmru
dc.subjectsol-gel technologyru
dc.subjectoptimal parametersru
dc.subjectvolt-ampere characteristicsru
dc.subjectcoatings for microelectronicsru
dc.titleOptimization of Dielectric Sol-Gel Coating Synthesis Parameters via Genetic Algorithmru
dc.typeArticleru
dc.root9th International Conference on Information, Control, and Communication Technologiesru
dc.placeOfPublicationGomel-
dc.identifier.DOI10.1109/ICCT67028.2025.11427795-
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