Title: Optimization of Dielectric Sol-Gel Coating Synthesis Parameters via Genetic Algorithm
Authors: Vaskevich, V.V.
Kovalenko, D.L.
Nikityuk, Y.V.
Gaishun, V.E.
Aushev, I.Y.
Васькевич, В.В.
Коваленко, Д.Л.
Никитюк, Ю.В.
Гайшун, В.Е.
Аушев, И.Ю.
Keywords: genetic algorithm
sol-gel technology
optimal parameters
volt-ampere characteristics
coatings for microelectronics
Issue Date: 2025
Citation: Optimization of Dielectric Sol-Gel Coating Synthesis Parameters via Genetic Algorithm / V.V. Vaskevich, D.L. Kovalenko, Y.V. Nikityuk [et al.] // 9th International Conference on Information, Control, and Communication Technologies (ICCT). - Gomel, 2025. - Р. [1-4].
Abstract: This study optimized the parameters of silicon dioxide coating formation using a genetic algorithm. The coatings were prepared via the sol-gel method. Experiments were conducted using a face-centered central composite design, with the following input parameters: the ratio of silicon organic compounds in the initial sol, spin-coating rotation speed, and annealing temperature. The output characteristics included coating thickness, refractive index, and leakage currents of the sol-gel coatings. The influence of coating formation parameters on these characteristics was evaluated. The coating process optimization was performed using a genetic algorithm with the objective of minimizing leakage currents for sol-gel coatings of specified thickness.
URI: https://elib.gsu.by/handle123456789/84692
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