Title: Sol-Gel Synthesis of Functional Nanostructured Materials for Electronic Devices
Authors: Rogachev, A.V.
Luca, D.
Gaishun, V.E.
Semchenko, A.V.
Sidsky, V.V.
Tyulenkova, O.
Kovalenko, D.L.
Keywords: sol-gel method
ferromagnetics
semiconductors
non-volatile memory devices
perovskite structure
SBTN films
ZnO films
FexCoyOz films
Issue Date: 2015
Citation: Sol-Gel Synthesis of Functional Nanostructured Materials for Electronic Devices / A.V. Rogachev, D. Luca, V.E. Gaishun [et al.] // Advanced Materials Research. - 2015. - Vol. 1117. - P. 164-167.
Abstract: The possibility of functional nanostructured materials for electronic devices synthesis by sol-gel method have been discussed such as ferroelectrics (SrBi2(TaxNb1-x)2O9) , ferromagnetics (FexCoyOz) and semiconductors (ZnO). The structural features of the surface (AFM), crystallization behavior (XRD) during the heating and properties of synthesized films are discussed. Achieved parameters suggest the possibility of using synthesized SBTN sol-gel films in non-volatile memory devices, semiconductors active ZnO layers in solar sells, ferromagnetics FexCoyOz films in microwave absorber covers.
URI: http://elib.gsu.by/jspui/handle/123456789/33281
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