Efficient surface passivation of n-type black silicon

Abstract

Surface recombination losses significantly reduce the efficiency of black silicon (b-Si) for solar cell applications. Surface passivation using suitable dielectric films can minimize these losses. This paper reports the investigation on the passivation properties of the hafnium dioxide (HfO2) film deposited on n-type b-Si surface via the atomic layer deposition method. It is shown that in addition to efficient passivation, HfO2 film reduces the reflectance of the b-Si surface in the wide spectral range.