Modeling of mechanical influence of double-beam laser on single-crystalline silicon

Abstract

The results of finite-element modeling of controlled laser thermosplitting of crystalline silicon are presented. The case of treatment by two laser beam with wavelengths, namely 0.808 m and 1.06 m is studied. Calculations of the thermoelastic fields formed in a single-crystalline silicon wafer as a result of consecutive two-beam laser heating and action of coolant were performed for silicon crystalline orientations: (100), (110), (111). Modeling was performed for circular and U-shaped laser beams. The results received in the presented work, can be used for the process optimization concerning the precise separation of silicon wafers by laser cutting.