Photoelectric characteristics of the photodiode structure Al/ZnO:MgO/p-Si/Al

Abstract

This paper presents the results of investigations of the photoelectric characteristics of the Al/ZnO:MgO/p-Si/Al photodiode structure. ZnO:MgO films were obtained by the sol-gel method with a ratio of 1:5. Silicon wafers KDB-4.5 were used as substrates, and the thickness of the obtained ZnO:MgO films was about 100 nm. The current-voltage characteristics have been measured and analyzed under the influence of optical radiation of different wavelengths (278 nm, 405 – 1064 nm), the absolute spectral sensitivity at low and high bias voltage was calculated. It is shown that the photosensitivity of the Al/ZnO:MgO/p-Si/Al photodiode structure increases with the rise of the bias voltage from 2.5 V to 20 V in the UV region of the spectrum, reaching 12.2 A/W at a wavelength of 278 nm, and in the visible and IR wavelength ranges it is from 2.5 to 5 A/W.